Home | deutsch | Legals | Data Protection | Sitemap | KIT

Impedance Characterization of High-Frequency Gate Drive Circuits for Silicon RF MOSFET and Silicon-Carbide Field-Effect Transistors

Impedance Characterization of High-Frequency Gate Drive Circuits for Silicon RF MOSFET and Silicon-Carbide Field-Effect Transistors
Author:

 M. Meisser, K. Haehre

links:
Source:

PCIM Europe, Nuremberg, Germany

Date: 2012