Impedance Characterization of High Frequency Power Electronic Circuits
Author: | M. Meisser, K. Hähre, R. Kling |
links: | Presentation |
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Source: | PEMD conference, Bristol, UK |
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Date: | 2012 | ||
Wide bandgap semiconductors as Silicon Carbide (SiC) lead
to devices with smaller body capacitances and thereby
support the continuous rise of operating frequency and
switching speed of switch mode power supplies. However,
parasitic elements coming from the real world setup gain
more and more impact on system performance. In order to
identify parasitic circuit components and corresponding
resonances, this work is about small-signal impedance spectra
measurements of power electronic circuits. Knowing the
involved parasitics, destructive resonance phenomena can be
avoided and electromagnetic radiation can be reduced. In
order to include voltage drift effects of capacitive circuit
elements, also impedance measurements with high voltage
DC-bias were performed. For that, a broadband DC-blocker
with 1 kV bias voltage rating was developed. Exemplary, two
applications were investigated closer: a power semiconductor
dynamic test circuit and an RF half-bridge inverter for the
pulsed operation of dielectric barrier discharge (DBD) light
sources.