Publikationen

Impact of silver incorporation at the back contact of Kesterite solar cells on structural and device properties.
Mwakyusa, L. P.; Leist, L.; Rinke, M.; Welle, A.; Paetzold, U. W.; Richards, B. S.; Hetterich, M.
2020. Thin solid films, 709, Art.-Nr. 138223. doi:10.1016/j.tsf.2020.138223

Hybrid chemical bath deposition-CdS/sputter-Zn(O,S) alternative buffer for Cu2ZnSn(S,Se)4 based solar cells editors-pick.
Kogler, W.; Schnabel, T.; Ahlswede, E.; Taskesen, T.; Gütay, L.; Hauschild, D.; Weinhardt, L.; Heske, C.; Seeger, J.; Hetterich, M.; Powalla, M.
2020. Journal of applied physics, 127 (16), 165301. doi:10.1063/1.5142550

Averaged angle-resolved electroreflectance spectroscopy on Cu(In,Ga)Se solar cells: Determination of buffer bandgap energy and identification of secondary phase.
Seeger, J.; Grutke, J.; Weber, N.; Schützhoff, S.; Jin, X.; Schneider, R.; Gerthsen, D.; Witte, W.; Hariskos, D.; Kiowski, O.; Schweiger, M.; Kalt, H.; Hetterich, M.
2019. Applied physics letters, 115 (26), Art.-Nr. 263901. doi:10.1063/1.5123380

CZTSe solar cells prepared by co-evaporation of multilayer Cu–Sn/Cu,Zn,Sn,Se/ZnSe/Cu,Zn,Sn,Se stacks.
Mwakyusa, L. P.; Neuwirth, M.; Kogler, W.; Schnabel, T.; Ahlswede, E.; Paetzold, U. W.; Richards, B. S.; Hetterich, M.
2019. Physica scripta, 94 (10), 105007. doi:10.1088/1402-4896/ab2b16

Band-Gap engineering in Cu2ZnSn(S,Se)4 solar cells by post-sulphurization of selenized absorber layers.
Neuwirth, M.; Seydel, E.; Kalt, H.; Hetterich, M.
2019. 44th IEEE Photovoltaics Specialists Conference, 2017 IEEE PVSC-44, June 25-30, 2017, Washington, DC

A multiple-selenization process for enhanced reproducibility of Cu2ZnSn(S,Se)4 solar cells.
Neuwirth, M.; Seeger, J.; Zhou, H.; Schnabel, T.; Ahlswede, E.; Kalt, H.; Hetterich, M.
2019. 20th International Conference on Ternary and Multinary Compounds ( ICTMC), September 5 – 9, 2016, Halle (Saale)

Electroreflectance studies of Zn(O,S) buffer layers in Cu(In,Ga)Se2 solar cells: Bandgap energies and secondary phases.
Seeger, J.; Zerulla, B.; Grutke, J.; Witte, W.; Hariskos, D.; Kiowski, O.; Kalt, H.; Hetterich, M.
2019. 46th IEEE Photovoltaic Specialists Conference, PVSC 2019; Chicago; United States; 16 -21 June 2019, 949–952, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/PVSC40753.2019.8980771

Temperature-dependent studies of exciton binding energy and phase-transition suppression in (Cs,FA,MA)Pb(I,Br)${}_3$ perovskites.
Ruf, F.; Aygüler, M. F.; Giesbrecht, N.; Rendenbach, B.; Magin, A.; Docampo, P.; Kalt, H.; Hetterich, M.
2019. APL materials, 7 (3), Article: 031113. doi:10.1063/1.5083792

Reversible bandgap instabilities in multiple-cation mixed-halide perovskite solar cells.
Ruf, F.; Rietz, P.; Aygüler, M. F.; Docampo, P.; Kalt, H.; Hetterich, M.
2019. International Conference on Perovskite Solar Cells, Photonics and Optoelectronics (NIPHO19), February 25 - 27, 2019, Jerusalem, Israel (2019)

Efficient All-Evaporated pin-Perovskite Solar Cells: A Promising Approach Toward Industrial Large-Scale Fabrication.
Abzieher, T.; Schwenzer, J. A.; Moghadamzadeh, S.; Sutterluti, F.; Hossain, I. M.; Pfau, M.; Lotter, E.; Hetterich, M.; Richards, B. S.; Lemmer, U.; Powalla, M.; Paetzold, U. W.
2019. IEEE journal of photovoltaics, 9 (5), 1249–1257. doi:10.1109/JPHOTOV.2019.2920727

Electroreflectance studies of CdS buffers in CIGS solar cells: Influence of Ga content and thermal annealing on the CdS bandgap.
Weber, N.; Seeger, J.; Grutke, J.; Witte, W.; Hariskos, D.; Kiowski, O.; Kalt, H.; Hetterich, M.
2019. DPG-Frühjahrstagung der Sektion Kondensierte Materie (SKM), Fachverband Halbleiterphysik (2019), Regensburg, Germany, March 31–April 5, 2019

Simulation of electroreflectance spectra of CIGS solar cells.
Förstner, E.; Magin, A.; Ruf, F.; Huber, C.; Witte, W.; Hariskos, D.; Kiowski, O.; Kalt, H.; Hetterich, M.
2019. DPG-Frühjahrstagung der Sektion Kondensierte Materie (SKM), Fachverband Halbleiterphysik (2019), Regensburg, Germany, March 31–April 5, 2019

Surface potential distribution studies on Cu(In,Ga)Se₂ solar cell cross sections with Kelvin probe force microscopy.
Schundelmeier, J.; Seeger, J.; Witte, W.; Hariskos, D.; Kiowski, O.; Kalt, H.; Hetterich, M.
2019. DPG-Frühjahrstagung der Sektion Kondensierte Materie (SKM), Fachverband Halbleiterphysik (2019), Regensburg, Germany, March 31–April 5, 2019

Reversible changes of the bandgap energy in multiple-cation mixed-halide perovskite solar cells under illumination and bias investigated by optical spectroscopy.
Wirth, E.; Ruf, F.; Aygüler, M. F.; Hanisch, J.; Docampo, P.; Ahlswede, E.; Kalt, H.; Hetterich, M.
2019. DPG-Frühjahrstagung der Sektion Kondensierte Materie (SKM), Fachverband Halbleiterphysik (2019), Regensburg, Germany, March 31–April 5, 2019

Influence of excitonic effects on charge carrier extraction in organic-inorganic perovskite solar cells.
Lange, P.; Ruf, F.; Hossain, I. M.; Paetzold, U. W.; Schultes, M.; Ahlswede, E.; Kalt, H.; Hetterich, M.
2019. DPG-Frühjahrstagung der Sektion Kondensierte Materie (SKM), Fachverband Halbleiterphysik (2019), Regensburg, Germany, March 31–April 5, 2019

Reversible bandgap instabilities in multiple-cation mixed-halide perovskite solar cells.
Ruf, F.; Rietz, P.; Aygüler, M. F.; Docampo, P.; Kalt, H.; Hetterich, M.
2019. DPG-Frühjahrstagung der Sektion Kondensierte Materie (SKM), Fachverband Halbleiterphysik (2019), Regensburg, Germany, March 31–April 5, 2019

Angle-resolved electroreflectance spectroscopy on CIGS solar cell absorber and buffer layers.
Seeger, J.; Grutke, J.; Witte, W.; Hariskos, D.; Kiowski, O.; Kalt, H.; Hetterich, M.
2019. DPG-Frühjahrstagung der Sektion Kondensierte Materie (SKM), Fachverband Halbleiterphysik (2019), Regensburg, Germany, March 31–April 5, 2019

Electron-Beam-Evaporated Nickel Oxide Hole Transport Layers for Perovskite-Based Photovoltaics.
Abzieher, T.; Moghadamzadeh, S.; Schackmar, F.; Eggers, H.; Sutterlüti, F.; Farooq, A.; Kojda, D.; Habicht, K.; Schmager, R.; Mertens, A.; Azmi, R.; Klohr, L.; Schwenzer, J. A.; Hetterich, M.; Lemmer, U.; Richards, B. S.; Powalla, M.; Paetzold, U. W.
2019. Advanced energy materials, 9 (12), Article no 1802995. doi:10.1002/aenm.201802995

Band-gap tuning of Cu₂ZnSn(S,Se)₄ solar cell absorbers via defined incorporation of sulphur based on a post-sulphurization process.
Neuwirth, M.; Seydel, E.; Seeger, J.; Welle, A.; Kalt, H.; Hetterich, M.
2018. Solar energy materials & solar cells, 182, 158–165. doi:10.1016/j.solmat.2018.03.033

Excitonic nature of optical transitions in electroabsorption spectra of perovskite solar cells.
Ruf, F.; Magin, A.; Schultes, M.; Ahlswede, E.; Kalt, H.; Hetterich, M.
2018. Applied physics letters, 112 (8), Art. Nr.: 083902. doi:10.1063/1.5017943

Temperature-Dependent Electromodulation Spectroscopy of Excitons in Perovskite Solar Cells.
Ruf, F.; Magin, A.; Schultes, M.; Ayguler, M. F.; Docampo, P.; Ahlswede, E.; Kalt, H.; Hetterich, M.
2018. 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018; Waikoloa Village; United States; 10 June 2018 through 15 June 2018, 1550–1554, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/PVSC.2018.8548225

Selenium and Sulphur replacement dynamics in CZTSSe and CZGSSe kesterite materials.
Neuwirth, M.; Kohl, T.; Brammertz, G.; Wild, J. D.; Meuris, M.; Poortmans, J.; Vermang, B.; Kalt, H.; Hetterich, M.
2018. 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018; Waikoloa Village; United States; 10 June 2018 through 15 June 2018, 160–162, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/PVSC.2018.8548130

Electroreflectance spectroscopy on CdS and Zn(O,S) buffer layers in Cu(In,Ga)Se2 solar cells: Suppression of interference effects.
Seeger, J.; Piesch, U.; Witte, W.; Hariskos, D.; Kiowski, O.; Kalt, H.; Hetterich, M.
2018. 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018; Waikoloa Village; United States; 10 June 2018 through 15 June 2018, 1949–1952, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/PVSC.2018.8547688

The Bandgap as a Moving Target: Reversible Bandgap Instabilities in Multiple-Cation Mixed-Halide Perovskite Solar Cells.
Ruf, F.; Rietz, P.; Aygüler, M. F.; Kelz, I.; Docampo, P.; Kalt, H.; Hetterich, M.
2018. ACS energy letters, 3 (12), 2995–3001. doi:10.1021/acsenergylett.8b01857

Impact of the degree of Cu-Zn order in Cu2ZnSn(S,Se)4 solar cell absorbers on defect states and band tails.
Lang, M.; Renz, T.; Opolka, A.; Zimmermann, C.; Krämmer, C.; Neuwirth, M.; Kalt, H.; Hetterich, M.
2018. Applied physics letters, 113 (3), Art. Nr.: 033901. doi:10.1063/1.5036622

Temperature-dependent electroabsorption spectroscopy on organic-inorganic perovskite solar cells.
Ruf, F.; Magin, A.; Schultes, M.; Ahlswede, E.; Kalt, H.; Hetterich, M.
2018. DPG-Frühjahrstagung der Sektion Kondensierte Materie gemeinsam mit der EPS, Fachverband Halbleiterphysik (2018), Berlin, Germany, March 11–16, 2018

Electromodulation spectroscopy on organic-inorganic perovskite solar cells.
Magin, A.; Ruf, F.; Schultes, M.; Ahlswede, E.; Schwenzer, J.; Kalt, H.; Hetterich, M.
2018. DPG-Frühjahrstagung der Sektion Kondensierte Materie gemeinsam mit der EPS, Fachverband Halbleiterphysik (2018), Berlin, Germany, March 11–16, 2018

Suppression of interference effects in electroreflectance spectroscopy on Cu(In,mGa)(S, Se)₂ solar cell buffer layers.
Seeger, J.; Piesch, U.; Kiowski, O.; Hariskos, D.; Witte, W.; Powalla, M.; Eraerds, P.; Lechner, R.; Dalibor, T.; Kalt, H.; Hetterich, M.
2018. DPG-Frühjahrstagung der Sektion Kondensierte Materie gemeinsam mit der EPS, Fachverband Halbleiterphysik (2018), Berlin, Germany, March 11–16, 2018

CZTSe solar cells prepared by co-evaporation of Cu-Sn/CZTSe/ZnSe/CZTSe layer stacks.
Mwakysa, L.; Neuwirth, M.; Paetzold, U.; Richards, B.; Kalt, H.; Hetterich, M.
2018. DPG-Frühjahrstagung der Sektion Kondensierte Materie gemeinsam mit der EPS, Fachverband Halbleiterphysik (2018), Berlin, Germany, March 11–16, 2018

Band-gap tunig of Cu₂ZnSn(S,Se)₄ solar cell absorbers via defined adjustment of the chalcogenide ratio using a post-sulphurization process.
Neuwirth, M.; Seydel, E.; Seeger, J.; Welle, A.; Kalt, H.; Hetterich, M.
2018. DPG-Frühjahrstagung der Sektion Kondensierte Materie gemeinsam mit der EPS, Fachverband Halbleiterphysik (2018), Berlin, Germany, March 11–16, 2018

Band Gap Changes of the CdS Buffer Induced by Post-Annealing of Cu2ZnSn(S,Se)4 Solar Cells.
Lang, M.; Schafer, N.; Huber, C.; Schnabe, T.; Kalt, H.; Hetterich, M.
2017. 44th IEEE c, 2017 IEEE PVSC-44, June 25-30, 2017, Washington, DC, 2216–2219, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/PVSC.2017.8366413

Replicated petal surfaces as light-harvesting layers for photovoltaics: the role of structural disorder.
Fritz, B.; Hünig, R.; Schmager, R.; Hetterich, M.; Lemmer, U.; Gomard, G.
2017. 644. WE-Heraeus-Seminar

Numerical analysis of structural disorder effects for the design of plant-inspired light harvesting coatings.
Fritz, B.; Hünig, R.; Schmager, R.; Hetterich, M.; Lemmer, U.; Gomard, G.
2017. European Materials Research Society (E-MRS)

Numerical analysis of structural disorder effects for the design of plant-inspired light harvesting coatings.
Fritz, B.; Huenig, R.; Schmager, R.; Hetterich, M.; Lemmer, U.; Gomard, G.
2017. Spring School: Tailored Disorder, Karlsruher Institut für Technologie (KIT)

Additive-Assisted Crystallization Dynamics in Two-Step Fabrication of Perovskite Solar Cells.
Abzieher, T.; Mathies, F.; Hetterich, M.; Welle, A.; Gerthsen, D.; Lemmer, U.; Paetzold, U. W.; Powalla, M.
2017. Physica status solidi / A, 214 (12), Art.Nr. 1700509. doi:10.1002/pssa.201700509

Assessing the influence of structural disorder on the plant epidermal cells’ optical properties: a numerical analysis.
Fritz, B.; Hünig, R.; Schmager, R.; Hetterich, M.; Lemmer, U.; Gomard, G.
2017. Bioinspiration & biomimetics, 12 (3), Art.Nr. 036011. doi:10.1088/1748-3190/aa6c46

Luminescence properties of Cu2ZnSn(S,Se)4 solar cell absorbers: State filling versus screening of electrostatic potential fluctuations.
Lang, M.; Zimmermann, C.; Krämmer, C.; Renz, T.; Huber, C.; Kalt, H.; Hetterich, M.
2017. Physical review / B, 95 (15), Art. Nr.: 155202. doi:10.1103/PhysRevB.95.155202

Morphology of multiple-selenized Cu₂ZnSn(S,Se)₄ absorber layers.
Neuwirth, M.; Seeger, J.; Kalt, H.; Hetterich, M.
2017. Physica status solidi / C, 14 (6), Art. Nr.: e201600163. doi:10.1002/pssc.201600163

A multiple-selenization process for enhanced reproducibility of Cu2ZnSn(S,Se)4 solar cells.
Neuwirth, M.; Zhou, H.; Schnabel, T.; Ahlswede, E.; Kalt, H.; Hetterich, M.
2016. Applied physics letters, 109 (23), Art. Nr.: 233903. doi:10.1063/1.4971362

Analysis of the radiative transitions in CZTSSe solar cells with varying degree of Cu-Zn order.
Lang, M.; Renz, T.; Zimmermann, C.; Krammer, C.; Kalt, H.; Hetterich, M.
2016. 43rd Photovoltaic Specialists Conference (PVSC), Portland, OR, USA, 5–10 June 2016, 0179–0182, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/PVSC.2016.7749573

Influence of the Cu Content in Cu2ZnSn(S,Se)4 solar cell absorbers on order-disorder related band gap changes.
Lang, M.; Renz, T.; Mathes, N.; Neuwirth, M.; Schnabel, T.; Kalt, H.; Hetterich, M.
2016. Applied physics letters, 109 (14), Art. Nr.: 142103. doi:10.1063/1.4964346

Preparation of Cu2ZnSnSe4 solar cells by low-temperature co-evaporation and following selenization.
Gao, C.; Schnabel, T.; Abzieher, T.; Ahlswede, E.; Powalla, M.; Hetterich, M.
2016. Applied physics letters, 108 (1), Art.Nr. 013901. doi:10.1063/1.4939445

Electron spin flip Raman spectroscopy of the diluted magnetic semiconductor Zn1-xMnxSe below the metal-insulator Transition.
Knapp, A. G.; Petznick, S.; Jansson, F.; Wiemer, M.; Hetterich, M.; Gebhard, F.; Baranovskii, S. D.; Klar, P. J.; Geurts, J.
2016. Physica status solidi / C, 13 (7-9), 542–545. doi:10.1002/pssc.201510267

Flower Power: Exploiting Plants’ Epidermal Structures for Enhanced Light Harvesting in Thin-Film Solar Cells.
Hünig, R.; Mertens, A.; Stephan, M.; Schulz, A.; Richter, B.; Hetterich, M.; Powalla, M.; Lemmer, U.; Colsmann, A.; Gomard, G.
2016. Advanced optical materials, 4 (10), 1487–1493. doi:10.1002/adom.201600046

Source and effects of sodium in solution-processed kesterite solar cells.
Abzieher, T.; Schnabel, T.; Hetterich, M.; Powalla, M.; Ahlswede, E.
2016. Physica status solidi / A, 213 (4), 1039–1049. doi:10.1002/pssa.201532619

Optoelectrical improvement of ultra-thin Cu(In,Ga)Se₂ solar cells through microstructured MgF₂ and Al₂O₃ back contact passivation layer.
Casper, P.; Hünig, R.; Gomard, G.; Kiowski, O.; Reitz, C.; Lemmer, U.; Powalla, M.; Hetterich, M.
2016. Physica status solidi / Rapid research letters, 10 (5), 376–380. doi:10.1002/pssr.201600018

The influence of the degree of Cu-Zn disorder on the radiative recombination transitions in Cu2ZnSn(S,Se)4 solar cells.
Lang, M.; Zimmermann, C.; Krammer, C.; Huber, C.; Schnabel, T.; Abzieher, T.; Ahlswede, E.; Kalt, H.; Hetterich, M.
2015. 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC), 14-19 June 2015, New Orleans, LA, Art.Nr. 7356095, Institute of Electrical and Electronics Engineers (IEEE). doi:10.1109/PVSC.2015.7356095

Electroreflectance of thin-film solar cells: Simulation and experiment.
Huber, C.; Krämmer, C.; Sperber, D.; Magin, A.; Kalt, H.; Hetterich, M.
2015. Physical review / B, 92 (7), Art. Nr.: 075201. doi:10.1103/PhysRevB.92.075201

Diffuse electroreflectance of thin-film solar cells: Suppression of interference-related lineshape distortions.
Krämmer, C.; Huber, C.; Redinger, A.; Sperber, D.; Rey, G.; Siebentritt, S.; Kalt, H.; Hetterich, M.
2015. Applied physics letters, 107 (22), 222104. doi:10.1063/1.4936649

Epitaxial Cu2ZnSnSe4 layers by annealing of Sn/Cu/ZnSe(001) precursors on GaAs(001).
Krämmer, C.; Sachs, J.; Pfaffmann, L.; Musiol, T.; Lang, M.; Gao, C.; Gerthsen, D.; Kalt, H.; Powalla, M.; Hetterich, M.
2015. Thin Solid Films, 582, 158–161. doi:10.1016/j.tsf.2014.09.038

Fabrication of polycrystalline Cu2ZnSnSe4 layers with strongly preferential grain orientation via selenization of Sn/Cu/ZnSe(001)/GaAs(001) structures.
Krämmer, C.; Sachs, J.; Lang, M.; Pfaffmann, L.; Gao, C.; Gerthsen, D.; Kalt, H.; Powalla, M.; Hetterich, M.
2014. Applied Physics Letters, 104 (7), 071913. doi:10.1063/1.4866436

Assessment of crystal quality and unit cell orientation in epitaxial Cu2ZnSnSe4 layers using polarized Raman scattering.
Krämmer, C.; Lang, M.; Redinger, A.; Sachs, J.; Gao, C.; Kalt, H.; Siebentritt, S.; Hetterich, M.
2014. Optics Express, 22 (23), 28240–28246. doi:10.1364/OE.22.028240

Cross sections of operating Cu(In,Ga)Se2 thin-film solar cells under defined white light illumination analyzed by Kelvin probe force microscopy.
Zhang, Z.; Hetterich, M.; Lemmer, U.; Powalla, M.; Hoelscher, H.
2013. Applied physics letters, 102 (2), 023903/1–6. doi:10.1063/1.4775679

Reevaluation of the beneficial effect of Cu(In,Ga)Se₂ grain boundaries using Kelvin probe force microscopy.
Zhang, Z.; Tang, X.; Kiowski, O.; Hetterich, M.; Lemmer, U.; Powalla, M.; Hölscher, H.
2012. Applied Physics Letters, 100 (20), 203903/1–4. doi:10.1063/1.4714905

Nuclear spin polarization in single self-assembled In0.3Ga0.7As quantum dots by electrical spin injection.
Asshoff, P.; Wüst, G.; Merz, A.; Litvinov, D.; Gerthsen, D.; Kalt, H.; Hetterich, M.
2011. Physical Review B, 84 (12), 125302/1–6. doi:10.1103/PhysRevB.84.125302

TEM 3-beam study of annealing effects in InGaNAs using ab-initio structure factors for strain-relaxed supercells.
Müller, K.; Schowalter, M.; Rubel, O.; Hu, D. Z.; Schaadt, D. M.; Hetterich, M.; Gilet, P.; Fritz, R.; Volz, K.; Rosenauer, A.
2011. Journal of Physics: Conference Series, 326 (1), 012026/1–5

Thermal annealing of InAs quantum dots on patterned GaAs substrates.
Helfrich, M.; Hendrickson, J.; Rulke, D.; Kalt, H.; Hetterich, M.; Khitrova, G.; Gibbs, H.; Linden, S.; Wegener, M.; Schaadt, D. M.; Hu, D. Z.
2011. Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, Seoul, Korea, 25-30 July 2010, Part A. Ed.: J. Ihm, 217–218, American Institute of Physics (AIP). doi:10.1063/1.3666332

Growth and annealing of InAs quantum dots on pre-structured GaAs substrates.
Helfrich, M.; Hu, D. Z.; Hendrickson, J.; Gehl, M.; Rülke, D.; Gröger, R.; Litvinov, D.; Linden, S.; Wegener, M.; Gerthsen, D.; Schimmel, T.; Hetterich, M.; Kalt, H.; Khitrova, G.; Gibbs, H. M.; Schaadt, D. M.
2011. Journal of crystal growth, 323 (1), 187–190. doi:10.1016/j.jcrysgro.2010.11.162

A spintronic source of circularly polarized single photons.
Asshoff, P.; Merz, A.; Kalt, H.; Hetterich, M.
2011. Applied Physics Letters, 98 (11), 112106/1–3. doi:10.1063/1.3564893

Optical microcavities fabricated by DBR overgrowth of pyramidal-shaped GaAs mesas.
Rülke, D.; Karl, M.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M.
2011. Journal of Crystal Growth, 324 (1), 259–262. doi:10.1016/j.jcrysgro.2011.03.041

Growth and annealing of InAs quantum dots on pre-structured GaAs substrates.
Helfrich, M.; Hu, D. Z.; Hendrickson, J.; Gehl, M.; Rülke, D.; Gröger, R.; Litvinov, D.; Linden, S.; Wegener, M.; Gerthsen, D.; Schimmel, T.; Hetterich, M.; Kalt, H.; Khitrova, G.; Gibbs, H. M.; Schaadt, D. M.
2011. 16th Internat.Conf.on Molecular Beam Epitaxy (ICMBE 2010), Berlin, August 22-27, 2010

Reversed pyramids as novel optical micro-cavities.
Karl, M.; Ruelke, D.; Beck, T.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M.
2010. Superlattices and microstructures, 47 (1), 83–86. doi:10.1016/j.spmi.2009.07.011

GAAs micro-pyramids serving as optical micro-cavities.
Karl, M.; Beck, T.; Li, S.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M.
2010. AIP Conference Proceedings, 1199 (1), 369–371. doi:10.1063/1.3295456

Pulsed electrical spin injection into InGaAs quantum dots: Studies of the electroluminescence polarization dynamics.
Asshoff, P.; Loeffler, W.; Fluegge, H.; Zimmer, J.; Mueller, J.; Westenfelder, B.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M.
2010. AIP Conference Proceedings, 1199 (1), 383–385. doi:10.1063/1.3295463

Spin-polarization dynamics in InGaAs quantum dots during pulsed electrical spin-injection.
Asshoff, P.; Löffler, W.; Zimmer, J.; Füser, H.; Flügge, H.; Kalt, H.; Hetterich, M.
2009. Applied Physics Letters, 95 (20), 202105/1–3

Dependencies of micro-pillar cavity quality factors calculated with finite element methods.
Karl, M.; Kettner, B.; Burger, S.; Schmidt, F.; Kalt, H.; Hetterich, M.
2009. Optics Express, 17 (2), 1144–1158

Time-resolved studies of pulsed electrical spin injection into single InGaAs quantum dots.
Asshoff, P.; Zimmer, J.; Fuser, H.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M.
2009. Proceedings of the European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference (CLEO Europe/EQEC 2009), Munich, Germany, 14 - 19 June 2009, 5192133/1–1, Institute of Electrical and Electronics Engineers (IEEE)

Optical microcavities with pyramidal shape.
Ruelke, D.; Karl, M.; Beck, T.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M.
2009. Proceedings of the European Conference on Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference (CLEO Europe/EQEC 2009), Munich, Germany, 14 - 19 June 2009, 5196500/1–1, Institute of Electrical and Electronics Engineers (IEEE)

Electrical Spin Injection into Single InGaAs Quantum Dots.
Hetterich, M.; Löffler, W.; Aßhoff, P.; Passow, T.; Litvinov, D.; Gerthsen, D.; Kalt, H.
2009. Advances in Solid State Physics, 48, 103–114

Electrical spin injection into InGaAs quantum dots: Single dot devices and time-resolved studies of the electroluminescence polarization dynamics.
Schaadt, D. M.; Kalt, H.; Hetterich, M.; Löffler, W.; Aßhoff, P.; Flügge, H.; Müller, J.; Westenfelder, B.; Hu, D. Z.
2009. Papers presented at the 9th International Workshop on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS 9), 26 - 29 May 2008, Klink/Müritz, Germany. Ed.: M. Seemann, 432–437, Wiley-VCH Verlag

Influence of InGaAs cap layers with different in concentration on the properties of InGaAs quantum dots.
Litvinov, D.; Blank, H.; Schneider, D.; Gerthsen, D.; Vallaitis, T.; Leuthold, J.; Passow, T.; Grau, A.; Kalt, H.; Klingshirn, C.; Hetterich, M.
2008. Journal of Applied Physics, 103 (8), 083532/1–8

GaAs micro-pyramids serving as optical micro-cavities.
Schaadt, D. M.; Kalt, H.; Hetterich, M.; Karl, M.; Beck, T.; Weber, F. M.; Lupaca-Schomber, J.; Li, S.; Hu, D. Z.
2008. CLEO/QELS 2008 / Conference on Lasers and Electro-Optics & Conference on Quantum Electronics and Laser Science, 4 - 9 May 2008, San Jose, [CA], 1–2, Institute of Electrical and Electronics Engineers (IEEE)

GaAs micro-pyramids serving as optical micro-cavities.
Schaadt, D. M.; Kalt, H.; Hetterich, M.; Karl, M.; Beck, T.; Li, S.; Hu, D. Z.
2008. Physics of semiconductors - 28th International Conference on the Physics of Semiconductors ICPS 2006, 24 - 28 July 2006,Vienna, Austria. Ed.: W. Jantsch, American Institute of Physics (AIP)

High-fidelity all-electrical preparation of spin-polarized electrons in single InAs quantum dots.
Löffler, W.; Müller, J.; Flügge, H.; Mauser, C.; Passow, T.; Aßhoff, P.; Hetterich, M.; Kalt, H.; Li, S.
2008. Verhandlungen der Deutschen Physikalischen Gesellschaft, 43 (HL), 16.9

Time-resolved electroluminescence (TREL) measurements of InAs quantum-dot spin-injection LEDs.
Flügge, H.; Löffler, W.; Aßhoff, P.; Gohn, C.; Hetterich, M.; Kalt, H.
2008. Verhandlungen der Deutschen Physikalischen Gesellschaft, 43 (HL), 31.42

Coupled Bragg Pillar Cavities with Localized and Delocalized Mode Structure.
Karl, M.; Li, S.; Kalt, H.; Hetterich, M.; Müller, E.; Gerthsen, D.
2008. Verhandlungen der Deutschen Physikalischen Gesellschaft, 43 (HL), 24.2

GaAs Micropyramids as Optical Resonators.
Beck, T.; Karl, M.; Weber, F. M.; Lupaca-Schomber, J.; Li, S.; Hu, D. Z.; Schaadt, D. M.; Kalt, H.; Hetterich, M.
2008. Verhandlungen der Deutschen Physikalischen Gesellschaft, 43 (HL), 24.10

Influence of sulfur on the polarization degree in spin-injection light-emitting diodes with lattice-matched ZnMnSSe spin aligners.
Müller, J.; Löffler, W.; Westenfelder, B.; Kalt, H.; Hu, D. Z.; Schaadt, D. M.; Hetterich, M.
2008. Verhandlungen der Deutschen Physikalischen Gesellschaft, 43 (HL), 17.4

Optical cavity modes in micro-pyramids.
Karl, M.; Beck, T.; Weber, F. M.; Lupaca-Schomber, J.; Li, S.; Hu, D.; Schaadt, D. M.; Kalt, H.; Hetterich, M.
2008. 2008 Conference on Lasers and Electro-Optics & Quantum Electronics and Laser Science Conference (CLEO/QELS), 4 - 9 May 2008, San Jose, CA, 1–2, IEEE Service Center

GaAs pyramids on GaAs/AlAs Bragg reflectors as alternative microcavities.
Karl, M.; Weber, F. M.; Lupaca-Schomber, J.; Li, S.; Passow, T.; Löffler, W.; Kalt, H.; Hetterich, M.
2008. Superlattices and Microstructures, 43 (5-6), 635–638

Magneto-Optical Studies on Magnetic Semiconductors.
Argawal, K. C.; Daniel, B.; Klingshirn, C.; Hetterich, M.; Saito, H.; Yuasa, S.; Ando, K.
2008. Magnetic materials - proceedings of the International Conference on Magnetic Materials (ICMM-2007), 11 - 16 December 2007, Kolkata, India. Ed.: A. Ghoshray, 225–229, American Institute of Physics (AIP)

Q-factor and density of optical modes in pyramidal and cone-shaped GaAs microcavities.
Karl, M.; Beck, T.; Li, S.; Kalt, H.; Hetterich, M.
2008. Applied Physics Letters, 92 (23), 231105 /1–3

Spin-polarized excitonic emission from quantum dots after electrical injection.
Löffler, W.; Hetterich, M.; Mauser, C.; Kalt, H.; Li, S.; Leuthold, J.
2008. Papers presented at the 10th International Conference on the Optics of Excitons in Confined Systems (OECS-10), Messina, Patti, Italy, 10 - 13 September 2007. Ed.: V. Savona, Wiley-VCH Verlag

Spin-polarized excitonic emission from quantum dots after electrical injection.
Löffler, W.; Hetterich, M.; Mauser, C.; Kalt, H.; Li, S.; Leuthold, J.
2008. Physica Status Solidi (B), 245 (6), 1102–1105

Influence of InGaAs cap layers with different In concentration on the properties of InGaAs quantum dots.
Kalt, H.; Klingshirn, C.; Hetterich, M.; Passow, T.; Grau, A.; Litvinov, D.; Blank, H.; Schneider, R.; Gerthsen, D., [u.a.].
2008. Journal of Applied Physics, 103 (8), 083532/1–8

Determination of critical thickness for defect formation of CdSe/ZnSe heterostructures by transmission electron microscopy and photoluminescence spectroscopy.
Daniel, B.; Fallert, J.; Löffler, W.; Kalt, H.; Hetterich, M.; Litvinov, D.; Schowalter, M.; Rosenauer, A.
2008. Physica Status Solidi (A), 205 (12), 2892–2897

Systematic investigation into the influence of growth conditions on InAs/GaAs quantum dot properties.
Passow, T.; Li, S.; Feinäugle, P.; Vallaitis, T.; Leuthold, J.; Litvinov, D.; Gerthsen, D.; Hetterich, M.
2007. Journal of Applied Physics, 102 (7), 073511/1–9

Parallel preparation of highly spin-polarized electrons in single InAs/GaAs quantum dots.
Löffler, W.; Hetterich, M.; Mauser, C.; Li, S.; Passow, T.; Kalt, H.
2007. Virtual Journal of Quantum Information, 7 (6), 3 S

Parallel preparation of highly spin-polarized electrons in single InAs/GaAs quantum dots.
Löffler, W.; Hetterich, M.; Mauser, C.; Li, S.; Passow, T.; Kalt, H.
2007. Virtual Journal of Nanoscale Science and Technology, 15 (24), 3 S

Optical modes in pyramidal GaAs microcavities.
Weber, F. M.; Karl, M.; Lupaca-Schomber, J.; Löffler, W.; Li, S.; Passow, T.; Kalt, H.; Hetterich, M.; Hawecker, J.; Gerthsen, D.
2007. Virtual Journal of Nanoscale Science and Technology, 15 (17), 3 S

Effect of doping on the band structure in Spin-LED devices.
Höpcke, N.; Löffler, W.; Sailer, C.; Lupaca-Schomber, J.; Li, S.; Passow, T.; Klingshirn, C.; Hetterich, M.; Kalt, H.
2007. Verhandlungen der Deutschen Physikalischen Gesellschaft, 42 (HL), 46.67

Reliable parallel electrical initialization of spin-polarized electrons in InGaAs/GaAs quantum dots.
Löffler, W.; Mauser, C.; Lupaca-Schomber, J.; Li, S.; Passow, T.; Reimer, H.; Klingshirn, C.; Hetterich, M.; Kalt, H.
2007. Verhandlungen der Deutschen Physikalischen Gesellschaft, 42 (HL), 31.5

Coupled micro-cavities based on GaAs pillars.
Karl, M.; Löffler, W.; Li, S.; Passow, T.; Kalt, H.; Hetterich, M.; Müller, E.; Pérez-Willard, F.; Gerthsen, D.
2007. Verhandlungen der Deutschen Physikalischen Gesellschaft, 42 (HL), 46.71

GaAs pyramids as alternative micro-cavities.
Karl, M.; Weber, F. M.; Lupaca-Schomber, J.; Löffler, W.; Li, S.; Passow, T.; Kalt, K.; Hetterich, M.; Hawecker, J.; Gerthsen, D.
2007. Verhandlungen der Deutschen Physikalischen Gesellschaft, 42 (HL), 18.8

Optical Modes in Pyramidal Microcavities.
Weber, F. M.; Karl, M.; Lupaca-Schomber, J.; Löffler, W.; Li, S.; Passow, T.; Kalt, K.; Hetterich, M.; Hawecker, J.; Gerthsen, D.
2007. Verhandlungen der Deutschen Physikalischen Gesellschaft, 42 (HL), 46.70

Molecular Beam Epitaxy of phase-pure cubic InN.
Löffler, W.; Hetterich, M.; Li, S. F.; Kalt, H.; Schörmann, J.; As, D. J.; Lischka, K.; Schley, P.; Goldhahn, R.
2007. 14th European Molecular Beam Epitaxy Workshop (Euro-MBE 2007), 5-7 March 2007, Sierra Nevada, Granada, Spain, Sierra Nevada

The Role of Segregation in InGaAs Heteroepitaxy.
Passow, T.; Hetterich, M.; Litvinov, D.; Gerthsen, D.; Rosenauer, A.; Schowalter, M.
2007. Materials Science Forum, 539 - 543, 3540–3545

Parallel electrical spin preparation in InGaAs/GaAs quantum dots with high fidelity.
Löffler, W.; Mauser, C.; Höpcke, N.; Kalt, H.; Li, S.; Passow, T.; Reimer, H.; Hetterich, M.
2007. Conference digest / CLEO/Europe - IQEC 2007, 17 - 22 Juni, 2007, Munich, Germany; 1 CD-Rom, IF3_4, Institute of Electrical and Electronics Engineers (IEEE)

Optical modes in coupled pillar microcavities.
Karl, M.; Li, S.; Passow, T.; Löffler, W.; Kalt, H.; Hetterich, M.; Gerthsen, D.; Müller, E.
2007. Conference digest / CLEO/Europe - IQEC 2007, 17 - 22 Juni, 2007, Munich, Germany; 1 CD-Rom, CK_2, Institute of Electrical and Electronics Engineers (IEEE)

Influence of InGaAs cap layers with different In-concentrations on the structure and properties of InAs/GaAs quantum dot layers.
Hetterich, M.; Passow, T.; Grau, A.; Litvinov, D.; Gerthsen, D.; Vallaitis, T.
2007. Microscopy and Microanalysis, 13 (S03), 316–317

Systematic investigation into the influence of growth conditions on InAs/GaAs quantum dot properties.
Passow, T.; Li, S.; Feinäugle, P.; Hetterich, M.; Vallaitis, T.; Leuthold, J.; Litvinov, D.; Gerthsen, D.
2007. Journal of Applied Physics, 102 (7), 073511/1–9

Electrical spin injection into InGaAs quantum dot ensembles and single quantum dots.
Hetterich, M.; Löffler, W.; Fallert, J.; Passow, T.; Daniel, B.; Lupaca-Schomber, J.; Hetterich, J.; Li, S.-F.; Klingshirn, C.; Kalt, H.
2007. AIP Conference Proceedings, 893 (1), 1285–1286

Single and coupled photonic cavities - AlAs/GaAs DBR pillars and GaAs pyramids.
Karl, M.; Löffler, W.; Lupaca-Schomber, J.; Passow, T.; Li, S.-F.; Kalt, H.; Klingshirn, C.; Hetterich, M.; Hawecker, J.; Perez-Willard, F.; Gerthsen, D.
2007. AIP Conference Proceedings, 893 (1), 1133–1134

Localized and delocalized modes in coupled optical micropillar cavities.
Karl, M.; Löffler, W.; Kalt, H.; Hetterich, M.; Li, S.; Passow, T.
2007. Optics Express, 15 (13), 8191–8196

Parallel preparation of highly spin-polarized electrons in single InAs/GaAs quantum dots.
Löffler, W.; Hetterich, M.; Mauser, C.; Li, S.; Passow, T.; Kalt, H.
2007. Applied Physics Letters, 90 (23), 232105/1–3

Optical modes in pyramidal GaAs microcavities.
Weber, F. M.; Karl, M.; Lupaca-Schomber, J.; Löffler, W.; Li, S.; Passow, T.; Kalt, H.; Hetterich, M.; Hawecker, J.; Gerthsen, D.
2007. Applied Physics Letters, 90 (16), 161104/1–3

Spin and carrier relaxation dynamics in InAs/GaAs quantum-dot spin-LEDs.
Löffler, W.; Höpcke, N.; Mauser, C.; Fallert, J.; Passow, T.; Daniel; Li, S.; Kalt, H.; Hetterich, M.; Litvinov, D.; Gerthsen, D.
2007. Journal of Physics: Conference Series (JPCONF), 61, 745–749

Physics of GaIn(N)As-based quantum structures, semiconductor lasers, and single quantum dot spin-injection light-emitting diodes. habilitation thesis.
Hetterich, M.
2007. Universität Karlsruhe

Electrical spin injection from ZnMnSe into InGaAs quantum wells and quantum dots.
Löffler, W.; Tröndle, D.; Fallert, J.; Kalt, H.; Litvinov, D.; Gerthsen, D.; Lupaca-Schomber, J.; Passow, T.; Daniel, B.; Kvietkova, J.; Grün, M.; Klingshirn, C., and; Hetterich, M.
2006. Virtual Journal of Nanoscale Science and Technology, 13 (7), 3 S

Phonon properties in Zn1-xMnxSe bulk epilayers and thickness effect on the shape of reststrahlen band.
Agarwal, K. C.; Daniel, B.; Kälblein, D.; Klingshirn, C.; Hetterich, M.
2006. Verhandlungen der Deutschen Physikalischen Gesellschaft, 41 (HL), 9.44

Magneto-Optical Investigation of InGaAs Quantum Dot Spin-LEDs.
Fallert, J.; Löffler, W.; Tröndle, D.; Mauser, C.; Hetterich, M.; Kalt, H.
2006. Verhandlungen der Deutschen Physikalischen Gesellschaft, 41 (HL), 9.89

Electrical Spin Injection from ZnMnSe into InGaAs/GaAs Quantum Dots.
Löffler, W.; Tröndle, D.; Fallert, J.; Kalt, H.; Lupaca-Schomber, J.; Passow, T.; Daniel, B.; Kvietkova, J.; Hetterich, M.; Litvinov, D.; Gerthsen, D.
2006. Verhandlungen der Deutschen Physikalischen Gesellschaft, 41 (HL), 41.2

Conventional pillar-type and novel pyramidal III-V microcavities: Fabrication and characterization.
Karl, M.; Löffler, W.; Lupaca-Schomber, J.; Passow, T.; Li, S.; Kalt, H.; Klingshirn, C.; Hetterich, M.; Perez-Willard, F.; Hawecker, J.; Gerthsen, D.
2006. Verhandlungen der Deutschen Physikalischen Gesellschaft, 41 (HL), 50.55

Magneto-excitons in GaInNAs / GaAs quantum well structures.
Hetterich, M.; Grau, A.; Löffler, W.; Kalt, H.
2006. Verhandlungen der Deutschen Physikalischen Gesellschaft, 41 (HL), 15.5

Optical and acoustical ridge waveguides based on piezoelectric semiconductors for novel integrated acoustooptic components.
Hetterich, M.; Klingshirn, C.; Agarwal, K. C.; Daniel, B.
2006. Advances in spectroscopy for lasers and sensing. Ed.: B. Di Bartolo, 544, Springer Netherlands

Optical and acoustical ridge waveguides based on piezoelectric semiconductors for novel integrated acoustooptic components.
Brückner, J.; Silbereisen, J.; Daub, D.; Geyer, U.; Bastian, G.; Daniel, B.; Hetterich, M.
2006. Integrated optics, silicon photonics, and photonic integrated circuits, 3 - 5 April 2006, Strasbourg, France. Ed.: G. C. Righini, 618309/1–11, Society of Photo-optical Instrumentation Engineers (SPIE)

The role of segregation in InGaAs heteroepitaxy.
Passow, T.; Hetterich, M.; Litvinov, D.; Gerthsen, D.; Rosenauer, A.; Schowalter, M.
2006. Proceedings of the 19th Australian Conference on Microscopy and Microanalysis (ACMM-19), 6th – 9th February 2006, Sydney, Australia, Sydney

Temperature dependence of the GaAsN conduction band structure.
Grau, A.; Passow, T.; Hetterich, M.
2006. Applied Physics Letters, 89 (20), 202105/1–3

Electrical Spin Injection into InGa(N)As Quantum Structures and Single InGaAs Quantum Dots.
Hetterich, M.; Löffler, W.; Fallert, J.; Höpcke, N.; Burger, H.; Passow, T.; Li, S.; Daniel, B.; Ramadout, B.; Lupaca-Schomber, J.; Hetterich, J.; Klingshirn, C.; Kalt, H.; Litvinov, D.; Gerthsen, D.
2006. Physica Status Solidi (B), 243 (14), 3812–9824

Phonon Properties and Doping of Zn1-xMnxSe Epilayers Grown by Molecular-beam Epitaxy.
Agarwal, K. C.; Daniel, B.; Hofmann, T.; Klingshirn, C.; Hetterich, M.; Schubert, M.
2006. Physica Status Solidi (B), 243 (4), 914–918

Phonon and Free-Charge-Carrier Properties of Zn1-xMnxSe Epilayers Grown by Molecular-Beam Epitaxy.
Agarwal, K. C.; Daniel, B.; Klingshirn, C.; Hetterich, M.
2006. Physical Review B, 73 (4), 045211/1–9

Conduction-Band Electron Effective Mass in Zn0.87Mn0.13Se Measured by Terahertz and Far-Infrared Magnetooptic Ellipsometry.
Agarwal, K. C.; Daniel, B.; Klingshirn, C.; Hetterich, M.; Herzinger, C. M.; Schubert, M.; Hofmann, T.; Schade, U.
2006. Applied Physics Letters, 88 (4), 042105

Molecular Beam Epitaxy of phase pure cubic InN.
Li, S. F.; Löffler, W.; Hetterich, M.; Kalt, H.; Schörmann, J.; As, D. J.; Lischka, K.; Schley, P.; Goldhahn, R.
2006. Applied Physics Letters, 89 (26), 261903/1–3

Spin injection into GaIn(N)As-based quantum structures and single InGaAs quantum dots.
Hetterich, M.; Löffler, W.; Fallert, J.; Tröndle, D.; Kalt, H.; Passow, T.; Daniel, B.; Lupaca-Schomber, J.; Li, S.; Kvietkova, J.; Litvinov, D.; Gerthsen, D.
2006. Physica Status Solidi (B), 243 (14), 3812–3824

Investigation of InAs Quantum Dot Growth for Electrical Spin Injection Devices.
Passow, T.; Li, S.; Löffler, W.; Fallert, J.; Daniel, B.; Lupaca-Schomber, J.; Kvietkova, J.; Kalt, H.; Hetterich, M.; Litvinov, D.; Gerthsen, D.
2006. Physica Status Solidi (C), 3 (11), 3943–3946

Electrical spin injection into InGaAs quantum dots.
Löffler, W.; Tröndle, D.; Fallert, J.; Tsitsishvili, E.; Kalt, H.; Lupaca-Schomber, J.; Passow, T.; Daniel, B.; Kvietkova, J.; Hetterich, M.; Litvinov, D.; Gerthsen, D.
2006. Physica Status Solidi (C), 3 (7), 2406–2409

Transmission electron microscopy investigation of segregation and critical floating-layer content of indium for island formation in InGaAs.
Litvinov, D.; Gerthsen, D.; Rosenauer, A.; Schowalter, M.; Passow, T.; Hetterich, M.
2006. Physical review / B, 74, 165306

Defects and phase distribution in epitaxial ZnMnSe layers analyzed by transmission electron microscopy.
Litvinov, D.; Gerthsen, D.; Daniel, B.; Hetterich, M.; Klingshirn, C.
2006. Journal of applied physics, 100, 023523

Electrical spin injection from ZnMnSe into InGaAs-based quantum structures.
Löffler, W.; Tröndle, D.; Kalt, H.; Litvinov, D.; Gerthsen, D.; Lupaca-Schomber, J.; Passow, T.; Daniel, B.; Kvietkova, J.; Hetterich, M.
2006. Physica / E, 32, 434

Electrical spin injection from ZnMnSe into InGaAs quantum wells and quantum dots.
Löffler, W.; Tröndle, D.; Fallert, J.; Kalt, H.; Litvinov, D.; Gerthsen, D.; Lupaca-Schomber, J.; Passow, T.; Daniel, B.; Kvietkova, J.; Grün, M.; Klingshirn, C., and; Hetterich, M.
2006. Applied physics letters, 88, 062105

Optical gain in GaInNAs/GaAs multi-quantum well structures.
Kvietkova, J.; Hetterich, M.; Saez de Jauregui, D.; Egorov, A. Y.; Richert, H.
2002. In: ASDAM Conference proceedings 2002, The 4th International Conference on Advanced Semiconductor Devices and Microsystems, Bratislava, Slovakia 2002. S. 175-178

Enhancement of binding energies and polarized emission of 0D-biexcitons.
Hild, K.; Miller, D.; Langbein, W.; Woggon, U.; Hetterich, M.; Klingshirn, C.
2001. Physica status solidi B, 224 (2), 379

Huge binding energy of localized biexcitons in CdS/ZnS quantum structures.
Woggon, U.; Hild, K.; Gindele, F.; Langbein, W.; Hetterich, M.; Gruen, M.; Klingshirn, C.
2000. Phys. rev. B 61 (2000) S. 12632

Coherent propagation at high intensities on a free exciton resonance in a semiconductor: self-induced transmission.
Giessen, H.; Linden, S.; Kuhl, J.; Knorr, A.; Koch, S.; Hetterich, M.; Gruen, M.; Klingshirn, C.
2000. Superlattices and microstruct. 26 (1999) S. 103

First experimental observation of a two-dimensional electron gas in CdS/ZnSe double heterostructures.
Kazukauskas, V.; Gruen, M.; Petillon, S.; Storzum, A.; Hetterich, M.; Klingshirn, C.
1999. In: Proceedings. 24. International Conference on the Physics of Semiconductors, Jerusalem 1998. 1999. Fl/pdf/0309.pdf (V A 21). [CD-ROM]

Optical and structural properties of CdS/ZnSe strained layer superlattices.
Dinger, A.; Petillon, S.; Hetterich, M.; Goeppert, M.; Gruen, M.; Klingshirn, C.; Liang, J.; Weise, B.; Wagner, V.; Geurts, J.
1999. In: Proceedings. 24. International Conference on the Physics of Semiconductors, Jerusalem 1998. 1999. Fl/pdf/0292.pdf (IV A 2). [CD-ROM]

Raman- and FTIR investigation of CdS based strained layer superlattices.
Dinger, A.; Becker, R.; Goeppert, M.; Hetterich, M.; Gruen, M.; Klingshirn, C.; Liang, J.; Weise, B.; Wagner, V.; Geurts, J.
1999. Physica status solidi B 215 (1999) S. 413

Conduction band offset of the CdS/ZnSe heterostructures.
Dinger, A.; Petillon, S.; Gruen, M.; Hetterich, M.; Klingshirn, C.
1999. Semiconductor sci. and technol. 14 (1999) S. 595

Luminescence spectra and kinetics of disordered solid solutions.
Klochikhin, A.; Reznitsky, A.; Permogorov, S.; Breitkopf, T.; Gruen, M.; Hetterich, M.; Klingshirn, C.; Lyssenko, V.; Langbein, W.; Hvam, J.
1999. Phys. rev. B 59 (1999) S. 12947

Molecular beam epitaxy of CdS/ZnSe heterostructures.
Petillon, S.; Dinger, A.; Gruen, M.; Hetterich, M.; Kazukauskas, V.; Klingshirn, C.; Liang, J.; Weise, B.; Wagner, V.; Geurts, J.
1999. J. of cryst. growth 201/202 (1999) S. 453

Electronic structure and optical properties of ultrathin CdS/ZnS quantum-wells grown by molecular-beam epitaxy.
Hetterich, M.; Maerkle, C.; Dinger, A.; Gruen, M.; Klingshirn, C.
1999. Phys. rev. B 59 (1999) S. 10268

Growth of CdS/ZnS strained layer superlattices on GaAs(001) by molecular-beam epitaxy with special reference to their structural properties and lattice dynamics.
Dinger, A.; Hetterich, M.; Goeppert, M.; Gruen, M.; Klingshirn, C.; Weise, B.; Liang, J.; Wagner, V.; Geurts, J.
1999. J. of cryst. growth 200 (1999) S. 391

High-intensity pulse propagation in semiconductors: on-resonant self-induced transmission and effects in the continuum.
Giessen, H.; Linden, S.; Kuhl, J.; Knorr, A.; Koch, S.; Hetterich, M.; Gruen, M.; Klingshirn, C.
1999. Opt. express 4 (1999) S. 121

Chlorine doping of cubic CdS and ZnS grown by compound source molecular beam epitaxy.
Gruen, M.; Storzum, A.; Hetterich, M.; Kamilli, A.; Send, W.; Walter, T.; Klingshirn, C.
1999. J. of cryst. growth 201/202 (1999) S. 457

Self-induced transmission on a free exciton resonance in a semiconductor.
Giessen, H.; Knorr, A.; Haas, S.; Koch, S.; Linden, S.; Kuhl, J.; Hetterich, M.; Gruen, M.; Klingshirn, C.
1998. Phys. rev. let. 81 (1998) S. 4260

On the nature of nanometer-scale islands formed by cadmium selenide deposition on hexagonal cadmium sulfide (0001)A.
Gruen, M.; Funfrock, F.; Schunk, P.; Schimmel, T.; Hetterich, M.; Klingshirn, C.
1998. Appl. phys. let. 73 (1998) S. 1343-1345

Optical and thermal orientation of localized excitons in solid solutions under resonant excitation in a longitudinal magnetic field.
Reznitskii, A. N.; Kornievskii, A. V.; Kiselev, A. A.; Permogorov, S. A.; Tenishev, L. N.; Klochikhin, A. A.; Gerlach, H.; Hetterich, M.; Gruen, M.; Klingshirn, C.
1998. Phys. of the solid state 40 (1998) S. 829

Infrared spectroscopy of confined optical and folded acoustical phonons in strained CdSe/CdS superlattices.
Goeppert, M.; Hetterich, M.; Dinger, A.; O’Donnell, K. P.; Klingshirn, C.
1998. Phys. rev. B 57 (1998) S. 13068

Enhancement of exchange interaction in ultrathin CdS/ZnS quantum structures.
Gindele, F.; Woggon, U.; Langbein, W.; Hvam, J. M.; Hetterich, M.; Klingshirn, C.
1998. Solid state commun. 106 (1998) S. 653-657

Localization of excitons in ultrathin CdS/ZnS quantum structures.
Petri, W.; Hetterich, M.; Woggon, U.; Maerkle, C.; Dinger, A.; Gruen, M.; Klingshirn, C.; Kuemmell, T.; Bacher, G.; Forchel, A.
1998. J. of cryst. growth 184/185 (1998) S. 320-324

Coherent high-intensity pulse propagation on a free exciton resonance in a semiconductor.
Giessen, H.; Gindele, F.; Hetterich, M.; Gruen, M.; Petillon, S.; Klingshirn, C.; [u.a.].
1998. Phys. status solidi B 206 (1998) S. 27

3D versus 2D quantum confinement in coherently strained CdS/ZnS quantum structures.
Woggon, U.; Gindele, F.; Petri, W.; Hetterich, M.; Gruen, M.; Klingshirn, C.; [u.a.].
1998. Phys. status solidi B 206 (1998) S. 501

Exchange interaction in II-VI quantum dots and wells.
Woggon, U.; Gindele, F.; Langbein, W.; Hetterich, M.
1998. Phys. status solidi A 164 (1997) S. 505

Molekularstrahlepitaxie, strukturelle und optische Eigenschaften ultradünner CdS/ZnS-Quantentrogstrukturen. PhD dissertation.
Hetterich, M.
1998. Aachen 1998. (Berichte aus der Physik.) Fak. f. Physik, Diss. v. 13.2.1998., Universität Karlsruhe

Room-temperature, near-field reflection spectroscopy of single quantum wells.
Langbein, W.; Hvam, J.; Madsen, S.; Hetterich, M.; Klingshirn, C.
1997. Phys. status solidi A 164 (1997) S. 541

Elastic and plastic strain relaxation in ultra-thin CdS/ZnS quantum well structures grown by molecular beam epitaxy.
Hetterich, M.; Gruen, M.; Petri, W.; Maerkle, C.; Klingshirn, C.; Wurl, A.; Fischer, U.; Rosenauer, A.; Gerthsen, D.
1997. Phys. rev. B 56 (1997) S. 12369

Electronic states and optical gain in strained CdS/ZnS quantum structures.
Woggon, U.; Petri, W.; Dinger, A.; Petillon, S.; Hetterich, M.; Gruen, M.; O’Donnel, K.; Kalt, H.; Klingshirn, C.
1997. Phys. rev. B 55 (1997) S. 1364

Infrared-optical and electrical properties of undoped and Ga doped ZnO:Ga.
Goeppert, M.; Gehbauer, F.; Hetterich, M.; Muenzel, J.; Queck, D.; Klingshirn, C.
1997. J. of lumin. 72/74 (1997) S. 430-431

Wurtzite Znsub(x)Cdsub(1-x)S layers grown by combining MBE and hot-wall beam epitaxy.
Hetterich, M.; Petillon, S.; Petri, W.; Dinger, A.; Gruen, M.; Klingshirn, C.
1996. J. of cryst. growth 159 (1996) S. 81-84

Epitaxial growth and photoluminescence of hexagonal CdSsub(1-x)Sesub(x) alloy films.
Gruen, M.; Gerlach, H.; Breitkopf, T.; Hetterich, M.; Reznitsky, A.; Kalt, H.; Klingshirn, C.
1995. J. of cryst. growth 146 (1995) S. 414-417

Strain relief in wurtzite-type CdS and CdSe epitaxial films.
Gruen, M.; Hetterich, M.; Klingshirn, C.; Rosenauer, A.; Gebhardt, W.
1995. In: 22nd International Conference on the Physics of Semiconductors, Vancouver, Canada 1994. Ed.: D.J. Lockwood. Vol. 3. Singapore 1995. S. 2665

Growth of CdS layers by hot wall beam epitaxy and their application as quasi-substrates for molecular beam epitaxy of wurtzite CdSsub(1-x)Sesub(x).
Hetterich, M.; Gruen, M.; Gerlach, H.; Klingshirn, C.
1995. In: II-VI compounds and semimagnetic semiconductor. Ed.: H. Heinrich. Aedermannsdorf 1995. S. 415-418. (Materials science forum. 182/184.)

Decrease of the phase stability in II-VI epitaxial layers due to strain.
Gruen, M.; Hetterich, M.; Klingshirn, C.; Rosenauer, A.; Gebhardt, W.
1995. In: II-VI compounds and semimagnetic semiconductor. Ed.: H. Heinrich. Aedermannsdorf 1995. S. 235. (Materials science forum. 182/184.)

Many body effects and carrier dynamics in CdSe/CdS stark superlattices.
Langbein, W.; Hetterich, M.; Klingshirn, C.
1995. Phys. rev. B 51 (1995) S. 9922-9929

Picosecond luminescence dynamics in CdS/CdSe Stark superlattices.
Langbein, W.; Hetterich, M.; Grün, M.; Klingshirn, C.
1994. Appl. phys. let. 65 (1994) S. 2468

Spontaneous and stimulated photoluminescence of CdSe/Cds Stark superlattices.
Grün, M.; Langbein, W.; Hetterich, M.; Klingshirn, C.
1994. Superlattices and microstruct. 15 (1994) S. 463-465